Influence of Temperature on the Growth of Vertically Aligned ZnO Nanowires in Wet Oxygen Environment

Low-temperature growth and Raman scattering study of vertically aligned ZnO nanowires on Si substrate

Growth of vertically aligned ZnO nanorods using textured ZnO films

A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD) is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100) substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth pr...

the influence of the neo-platonic concept of poetic imagination on wordsworth’s poetry

بر اساس نظریه افلاطون در باره شعر خلاقیت هنری مورد انتقاد قرار گرفته است. نظریه کلی در مورد شعر این بود که شعر از ظواهرتقلید میکند و نه حقیقت. چون سایه ای از حقیقت است. اما با پیدایش فلسفه نو افلاطونی، انتقاتات قبلی در مورد شعر و شاعری اصلاح شد. فلوطین در کتاب انئید، اساس خلق هنری را بر محور مُثل افلاطونی قرار داد. وی باور داشت که هنر مندان در خلق آثار هنری، تحت تاثیر مُثل افلاطونی بوده و عوالمی ...

Patterned growth of vertically aligned ZnO nanowire arrays on inorganic substrates at low temperature without catalyst.

We report an approach for growing aligned ZnO nanowire arrays with a high degree control over size, orientation, dimensionality, uniformity, and possibly shape. Our method combines e-beam lithography and a low temperature hydrothermal method to achieve patterned and aligned growth of ZnO NWs at <100degreesC on general inorganic substrates, such as Si and GaN, without using catalyst. This approa...

Nucleation control for the growth of vertically aligned GaN nanowires

Aligned GaN nanowire arrays have high potentials for applications in future electronic and optoelectronic devices. In this study, the growth of GaN nanowire arrays with high degree of vertical alignment was attempted by plasma-enhanced CVD on the c-plane GaN substrate. We found that the lattice matching between the substrate and the nanowire is essential for the growth of vertically aligned GaN...